Failure Case Studies of GaAs-Based Oxide-Confined VCSELs

ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis Pub Date : 2020-12-01 DOI:10.31399/ASM.CP.ISTFA2020P0317

Kuang-Tse Ho, Ching-Hsiang Chan

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Abstract

This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM analysis are also presented in detail.

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gaas基氧化物约束VCSELs失效案例研究

本研究总结了gaas基氧化物约束vcsel的各种物理失效模式及其根本原因。详细介绍了标准失效分析程序，包括PEM或IR-OBIRCH的缺陷故障隔离和TEM分析的物理检测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis

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