{"title":"Thermal characterization of TSV array as heat removal element in 3D IC stacking","authors":"L. Zhang, H. Li, G. Lo, C. Tan","doi":"10.1109/EPTC.2012.6507069","DOIUrl":null,"url":null,"abstract":"Through-silicon-via (TSV) as a key enabler for three-dimensional (3D) integration provides electrical connections between stacked functional dies. This work examines the thermal characteristics of the TSV arrays and experimentally demonstrates that TSV arrays embedded in silicon substrate can be utilized as an effective heat removal element that helps in both heat dissipation and management of 3D integration. It is found that the use of appropriate TSV arrays which surround and are placed beneath a temperature sensor has an effective cooling capability as much as ∼40°C.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Through-silicon-via (TSV) as a key enabler for three-dimensional (3D) integration provides electrical connections between stacked functional dies. This work examines the thermal characteristics of the TSV arrays and experimentally demonstrates that TSV arrays embedded in silicon substrate can be utilized as an effective heat removal element that helps in both heat dissipation and management of 3D integration. It is found that the use of appropriate TSV arrays which surround and are placed beneath a temperature sensor has an effective cooling capability as much as ∼40°C.