Novel optical structure for micromachined wavelength-selective and tunable InP based MOEMS

Abstract

The paper describes a new concept for the fabrication of integrated wavelength selective photo-detectors (or emitters). These devices are based on the InP/InGaAs semiconductor system for application in the wavelength range from 1.1 to 1.7 /spl mu/m. Such integrated wavelength selective and tunable active devices are expected to be cost effective solutions for NIR spectroscopy or WDM optical communications.