The Quantitative Analysis Methodology of Charged Potential by Electron Beam Bombardment for Improving the Passive Voltage Contrast on Advanced Technology

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251028

Y.R. Chen

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Abstract

Passive voltage contrast (PVC) using electron beam (E-beam) is the popular technique of the failure analysis procedure of real integrated circuit (IC) products. When the sample is exposed on the different energy electron beam, the surface of sample is charged positively or negatively. The charging characteristic is dependent on the secondary electron yield, but that is just qualitative analysis of charging voltage using electron beam. Because of the advancement of technology, shrinking of device and lower operation voltage, the potential that the charge induced using electron beam must be considered. This methodology described in this paper is how to quantify the charging voltage when we applied the passive voltage contrast using low energy electron beam or high energy electron beam. Based on that, we can judge if the gate was turned on by this charged potential and the passive voltage contrast will be used more efficiently, especially for the soft defect on the front-end

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改进无源电压对比的电子束轰击带电电位定量分析方法

电子束无源电压对比(PVC)技术是实际集成电路(IC)产品失效分析中常用的技术。当样品暴露在不同能量的电子束下时，样品表面带正电荷或负电荷。充电特性与二次电子产率有关，但这只是利用电子束对充电电压的定性分析。由于技术的进步、器件的缩小和工作电压的降低，必须考虑电子束引起的电荷电位。本文描述的方法是在低能电子束和高能电子束进行无源电压对比时，如何量化充电电压。基于此，我们可以判断栅极是否被该带电电位导通，并且可以更有效地利用无源电压对比，特别是对于前端的软缺陷

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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