Simulation of 2D quantum transport in ultrashort DG-MOSFETs : a fast algorithm using subbands

Abstract

A numerical method for the resolution of the two dimensional Schrodinger equation with an incoming plane wave boundary condition is proposed and applied to the simulation of ultrashort channel double gate MOSFETs. The method relies on the decomposition of the wave function on subband eigenfunctions. The 2-D Schrodinger equation is then equivalent to a nondiagonal one-dimensional matrix Schrodinger system. The size of the matrix being the number of considered subbands. This leads to a drastic reduction of numerical cost. The method is illustrated by simulating a squeezed channel DGMOS.