Development of highly reliable Cu wiring of L/S=1/1µm for chip to chip interconnection

T. Kanki, J. Ikeda, Y. Kobayashi, S. Suda, Y. Nakata, T. Nakamura
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引用次数: 6

Abstract

Highly dense and reliable Cu wiring of L/S=1/1μm for chip to chip interconnection was developed, by improving the semi-additive process To meet the reliability requirements, a mechanism for leakage failures in the HAST environment was identified, and the improved processes for suppressing Cu corrosion and diffusion were established by reducing halogen ions and covering with metal cap barriers.
开发高可靠的L/S=1/1µm铜布线,用于芯片间互连
为满足可靠性要求,通过改进半增材工艺,确定了HAST环境下的泄漏失效机理,并建立了通过减少卤素离子和覆盖金属帽屏障抑制Cu腐蚀和扩散的改进工艺。
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