T. Kanki, J. Ikeda, Y. Kobayashi, S. Suda, Y. Nakata, T. Nakamura
{"title":"Development of highly reliable Cu wiring of L/S=1/1µm for chip to chip interconnection","authors":"T. Kanki, J. Ikeda, Y. Kobayashi, S. Suda, Y. Nakata, T. Nakamura","doi":"10.1109/IITC.2012.6251635","DOIUrl":null,"url":null,"abstract":"Highly dense and reliable Cu wiring of L/S=1/1μm for chip to chip interconnection was developed, by improving the semi-additive process To meet the reliability requirements, a mechanism for leakage failures in the HAST environment was identified, and the improved processes for suppressing Cu corrosion and diffusion were established by reducing halogen ions and covering with metal cap barriers.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Highly dense and reliable Cu wiring of L/S=1/1μm for chip to chip interconnection was developed, by improving the semi-additive process To meet the reliability requirements, a mechanism for leakage failures in the HAST environment was identified, and the improved processes for suppressing Cu corrosion and diffusion were established by reducing halogen ions and covering with metal cap barriers.