Interlaboratory comparison of noise-parameter measurements on CMOS devices with 0.12 μm gate length

2005 66th ARFTG Microwave Measurement Conference (ARFTG) Pub Date : 2005-12-01 DOI:10.1109/ARFTG.2005.8373127

A. Pesetski, J. Baumgardner, J. Murduck, Eric N. Folk, J. Przybysz, J. Adam, Hong Zhang, J. Verspecht, D. Barataud, J. Teyssier, J. Nebus, Choongeol Cho, P. Hale, D. I. Bergman, D. Keenan, Nazia Akil, B. Grossman, H. Arslan, Daljeet Singh, J. Randa, S. Sweeney, T. Mckay, D. Walker, D. Greenberg, J. Tao, Judah Mendez, G. A. Rezvani, J. Pekarik

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引用次数: 7

Abstract

We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 µm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the results were compared. Each of the laboratories used a different measurement method, although two used similar commercial systems. Effects of different calibration reference planes are shown. The devices measured have large values of |S11|, |S22|, and |Γopt|, and have very low minimum noise figures (below 0.2 dB) over some of the frequency range. For the most part, the measurements at the different laboratories are in reasonable agreement, though there are discrepancies. It is also evident that the noise performance of the devices is better than our ability to measure it.

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栅极长度为0.12 μm的CMOS器件噪声参数测量的实验室间比较

我们介绍了在0.12µm门长CMOS晶体管上进行的s参数和噪声参数测量的实验室间比较结果。在三个不同的实验室(IBM, NIST, RFMD)测量相同装置的副本，并比较结果。尽管两个实验室使用了类似的商业系统，但每个实验室都使用了不同的测量方法。给出了不同标定参考平面的标定效果。测量的器件具有较大的值|S11|、|S22|和|Γopt|，并且在某些频率范围内具有非常低的最小噪声值(低于0.2 dB)。在大多数情况下，不同实验室的测量结果是合理一致的，尽管存在差异。同样明显的是，设备的噪声性能优于我们的测量能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2005 66th ARFTG Microwave Measurement Conference (ARFTG)

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