A low phase noise VCO in eWLB package

F. Starzer, A. Fischer, H. Knapp, R. Lachner, M. Wojnowski, L. Maurer, A. Stelzer
{"title":"A low phase noise VCO in eWLB package","authors":"F. Starzer, A. Fischer, H. Knapp, R. Lachner, M. Wojnowski, L. Maurer, A. Stelzer","doi":"10.1109/EPTC.2012.6507101","DOIUrl":null,"url":null,"abstract":"A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.
eWLB封装中的低相位噪声压控振荡器
提出了一种基于200 ghz SiGe:C技术的压控振荡器(VCO)芯片封装协同设计方法。该压控振荡器使用封装定义的电感器进行频率调节。总带宽为21%,支持三种不同雷达应用的频段,使用单个硅器件。该压控振荡器由一个缓冲器、一个下变频混频器(D-Cm)以及一个预分频器组成。该VCO被组装在嵌入式晶圆级球栅阵列(eWLB)封装中,其电感器位于封装的风扇区域。中心频率高达18GHz,在100khz偏置频率下,相位噪声(PN)值为- 92 dBc/Hz,总带宽为21.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信