{"title":"Resolving Stripping, Etching, and Cleaning Challenges for Shrinking Dimensions from BEOL to Advanced Packaging","authors":"J. Daviot","doi":"10.1109/eptc.2018.8654266","DOIUrl":null,"url":null,"abstract":"The acceleration of advanced development globally to meet current and future system requirements has placed considerable stress on manufacturing methods in the semiconductor industry. For BEOL and FBEOL residue removal, photoresist stripping, and metal etching, new classes of specialty chemical processes are required to address these considerable challengesAdvances have been made in specific areas of compatibility, selectivity, safety, full dissolution of photoresists (P/N), and reductions in overall CoO to enable this wave of next generation integration. This presentation will discuss new technology in highly selective wet metal etchants, full dissolution PR stripping of thick resists, and advanced surface cleaning for high k","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/eptc.2018.8654266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The acceleration of advanced development globally to meet current and future system requirements has placed considerable stress on manufacturing methods in the semiconductor industry. For BEOL and FBEOL residue removal, photoresist stripping, and metal etching, new classes of specialty chemical processes are required to address these considerable challengesAdvances have been made in specific areas of compatibility, selectivity, safety, full dissolution of photoresists (P/N), and reductions in overall CoO to enable this wave of next generation integration. This presentation will discuss new technology in highly selective wet metal etchants, full dissolution PR stripping of thick resists, and advanced surface cleaning for high k