Exploring the sources of MEEF in contact SRAMs

E. Gallagher, I. Stobert, M. Higuchi, D. Samuels
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引用次数: 1

Abstract

Optical Proximity Correction (OPC) relies on predictive modeling to achieve consistent wafer results. To that end, understanding all sources of variation is essential to the successful implementation of OPC. This paper focuses on challenging SRAM layouts of contacts to study the sources of wafer variation. A range of shape geometries and contact configurations are studied. Contact shapes are no longer restricted to simple rectangles on the mask, some more complex OPC outputs may include shapes like H's or T's or even more fragmented figures. The result is a large group of parameters that can be measured at both mask and wafer level. The dependence of mask variation on geometry is studied through the statistical distributions of parameter variations. The mask metrology output is expanded from traditional linear dimensional measurements to include area, line edge roughness, corner rounding, and shape-to-shape metrics. Wafer mask error enhancement factor (MEEF) is then calculated for the various contact geometries. This collection of data makes it possible to study variation on many levels and determine the underlying source of wafer variations so that, ultimately, they can be minimized.
探索接触式sram中MEEF的来源
光学接近校正(OPC)依靠预测建模来实现一致的晶圆结果。为此,了解变异的所有来源对于成功实施OPC至关重要。本文的重点是挑战SRAM的触点布局,以研究晶圆变化的来源。一系列的形状几何和接触配置进行了研究。接触形状不再局限于掩模上的简单矩形,一些更复杂的OPC输出可能包括像H或T这样的形状,甚至更碎片化的数字。结果是可以在掩膜和晶圆级测量大量参数。通过参数变化的统计分布,研究了掩模变化对几何的依赖性。掩模计量输出从传统的线性尺寸测量扩展到包括面积,线边缘粗糙度,圆角和形状到形状的度量。然后计算各种接触几何形状的晶圆掩模误差增强因子(MEEF)。这些数据的收集使得在许多层面上研究变化成为可能,并确定晶圆变化的潜在来源,从而最终将其最小化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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