Fabrication process of a triple-layer stacked TSV interposer for switch matrix consisting of eight RF chips

Abstract

This paper presents one fabrication process of a triple-layer stacked TSV interposer for switch matrix consisting of eight RF chips. There are about 600 TSVs in the interposer and the diameter of TSV is 40um with the aspect ratio being 4:1. The whole area of the interposer is 13.5 mm × 7.5mm and the thickness of the triple-layer stacked interposer is only about 0.7mm. After the process, the electrical properties of RDL and TSV on the interposer are tested and the transmission losses of them are only about 0.2dB and 1.39dB at 4GHz, respectively.