Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573443

D. Ahn, S. Ji, M. Takenaka, S. Takagi

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引用次数: 21

Abstract

In_0.53Ga_0.47As/In_xGa_1-xAs/In_0.53Ga_0.47As Quantum Well (QW) structure Tunnel FETs (TFETs) has been proposed and demonstrated. The systematic QW In content and thickness dependence on the TFET performance was quantitatively examined. The QW TFETs can significantly enhance the tunneling probability and resulting on-current (I_on) by lower bandgap (E_g) of the higher In content InGaAs than bulk In_xGa_1-xAs TFETs, while the increase in the off current (I_off) can be suppressed by source junction formation in low In content In_0.53Ga_0.47As regions. The minimum sub-threshold swing (S.S._min) of 62 mV/dec was obtained at V_D=150mV in the In_0.53Ga_0.47As/In_xGa_1-xAs (3nm)/In_0.53Ga_0.47As QW structure. Also, the highest I_on of 56μA/μm at V_D=1V among the fabricated InGaAs QW TFETs was obtained by In_0.53Ga_0.47As/InAs(5 nm)/In_0.53Ga_0.47As QW structure. We have also realized EOT-scaled bulk In_0.53Ga_0.47As TFETs with 1.7nm-CET HfO₂ (2.7nm)/Al₂O₃ (0.3nm) gate stacks, exhibiting S.S_min of 57 mV/dec at V_D=100 mV.

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具有量子阱和EOT标度的InxGa1−xAs隧道场效应管的性能改进

提出并演示了一种量子阱(QW)结构的隧道场效应管(tfet)。定量研究了系统QW In含量和厚度对TFET性能的依赖性。与块体InxGa1-xAs tfet相比，QW tfet可以显著提高高In含量InGaAs的隧穿概率和低带隙(Eg)产生的通流(Ion)，而在低In含量In0.53Ga0.47As区域形成源结可以抑制关流(Ioff)的增加。在VD=150mV时，In0.53Ga0.47As/InxGa1-xAs (3nm)/In0.53Ga0.47As QW结构的最小亚阈值摆幅(S.S.min)为62 mV/dec。在VD=1V处，In0.53Ga0.47As/InAs(5 nm)/In0.53Ga0.47As QW结构获得了56μA/μm的最高离子。我们还用1.7nm-CET HfO2 (2.7nm)/Al2O3 (0.3nm)栅极堆叠实现了eot尺度的块体In0.53Ga0.47As tfet，在VD=100 mV时显示出57 mV/dec的s - smin。

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2016 IEEE Symposium on VLSI Technology

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