Multi-scale simulation of ultra-fast radiation anneal processes for robust process implementation

Abstract

Since the mid-1980's a great deal of effort has gone into simulation of wafer and die-scale thermal behavior during "conventional" rapid thermal processing (RTP) anneals. With ultra-fast anneal processes such as flash-lamp anneal and laser anneal taking a more prominent position in semiconductor manufacturing. The fundamentals of wafer heating such as time scales, associated lengths scales, and the spectral distribution of radiation used are revisited. The authors explore how the ultrafast anneal processes are expected to interact with pattern-scale effects revealing how simulation analysis will be critical component in bringing new radiation anneal processes to manufacturing