Metal bit-line common contact integration technology in 0.17 /spl mu/m-DRAM and merged DRAM in logic devices

Abstract

The metal bit-line common contact (MBCC) process has been successfully integrated in 0.17 /spl mu/m DRAM and in merged DRAM in logic devices. By introducing in-situ i-PVD Ti-TiN on W-plug MBCC, reliable electrical performance, P/sup +/ R/sub c/<1000 /spl Omega//cnt and N/sup +/ R/sub c/<500 /spl Omega//cnt without leakage, and process stability are achieved after thermal treatment at 750/spl deg/C for 100 min.