SPICE DC parameter extraction of MESFETs with diffused and grown channel

Abstract

A procedure for extracting SPICE (simulation program with IC emphasis) DC parameters of GaAs MESFETs is presented. The program developed produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed.<>