Surface Photovoltage and Contact Potential Difference Imaging of Defects Introduced by Plasma Processing of IC Devices

Abstract

Integrated circuit (IC) manufacturing involves a large number of plasma processes ranging from anisotropic etching, isotropic stripping and cleaning, to plasma enhanced material deposition and implantation. It frequently occurs that undesirable reactions between the partially completed IC devices and plasma environment can lead to detrimental and permanent changes of device properties. Two the most frequently encountered device degradation mechanisms are: 1. unbalanced charge transfer between the wafer and plasma sheath leading to so-called “antennae damage”, and 2. “radiation damage” caused by bombardment of the wafer with high energy photons, particles, and ions causing bond breakage,