{"title":"On-chip protection in precision integrated circuits operating at high voltage and high temperature","authors":"James Zhao, J. Salcedo, J. Hajjar","doi":"10.1109/IRPS.2016.7574605","DOIUrl":null,"url":null,"abstract":"A new high voltage swing bipolar ESD (electrostatic discharge) protection device for enabling low leakage precision mixed-signal interface circuits (ICs) operating at high voltage (~ 40 V to 60 V) and high temperature (~125°C to 200°C) is presented. Under these operating conditions, parasitic structures in junction-isolated high voltage process technologies induce unexpected shift in the leakage current over time, leading to malfunction in the precision high voltage input/output interface circuit. A proposed device design addresses the low leakage targets at the mentioned operating conditions, while achieving the required ESD robustness of the high voltage interface for industrial applications.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"21 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new high voltage swing bipolar ESD (electrostatic discharge) protection device for enabling low leakage precision mixed-signal interface circuits (ICs) operating at high voltage (~ 40 V to 60 V) and high temperature (~125°C to 200°C) is presented. Under these operating conditions, parasitic structures in junction-isolated high voltage process technologies induce unexpected shift in the leakage current over time, leading to malfunction in the precision high voltage input/output interface circuit. A proposed device design addresses the low leakage targets at the mentioned operating conditions, while achieving the required ESD robustness of the high voltage interface for industrial applications.