Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation

Abstract

In this paper, we investigate the performance of inverters and ring oscillators composed of gate-all-around (GAA) silicon nanowire and nanosheet (NSH) field-effect transistors (FETs), compared with FinFETs, for sub-10nm logic technology applications. Our TCAD transient simulations reveal that ring oscillators with 3 stacked channels with NSH width, three times wider than the fin width, exhibit improvements of up to 22% in the oscillation frequencies. compared to a ring oscillator with FinFETs. Thus, our study provides an insight for device down-selection in the development of GAA FET technology.