Interconnect scaling-the real limiter to high performance ULSI

M. Bohr
{"title":"Interconnect scaling-the real limiter to high performance ULSI","authors":"M. Bohr","doi":"10.1109/IEDM.1995.499187","DOIUrl":null,"url":null,"abstract":"Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of /spl sim/2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"537","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 537

Abstract

Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of /spl sim/2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements.
互连扩展-高性能ULSI的真正限制因素
减小互连间距可提高布局密度,但会降低互连RC延迟。增加金属长宽比(厚度/宽度)可以改善RC延迟,但在长宽比为/ sp1sim /2时可以实现最大效益。增加更多的互连层可以提高密度和性能,但在短短几代内就达到了实际极限。新的导体和介电材料以及改进的电路设计技术将需要满足未来的ULSI互连要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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