Enablers of robust sub-40 micrometer ultra fine pitch ball bonding

Shawn D. Sarbacker, D. Schalcosky
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引用次数: 0

Abstract

As device manufacturers execute their roadmaps, die shrinks are leading to progressively finer bond pad pitches with consequently smaller bond pad openings on which first bonds are placed. Bond pad pitches as low as 40 micrometers are currently in production with near-term roadmaps pushing to 35 micrometers and below. Based on statistical process capability models aligned with production process parameters, this paper will discuss how decisions made at the device, package, and equipment levels influence ultra fine pitch wire bonding process capability. Discussion will include equipment capability, wire and process selection, process specification, and device and package design considerations. Recommendations are made for how device manufacturers, package designers, and equipment manufacturers can work together to facilitate a smooth transition to sub-40 micrometer wire bonding.
实现坚固的40微米以下的超细间距球粘合
随着设备制造商执行他们的路线图,芯片缩小导致越来越细的键合垫间距,因此更小的键合垫开口,第一次键合放置。目前正在生产的粘结垫间距低至40微米,近期路线图将推动到35微米及以下。基于与生产工艺参数一致的统计工艺能力模型,本文将讨论在器件、封装和设备级别做出的决策如何影响超细间距线键合工艺能力。讨论将包括设备能力,电线和工艺选择,工艺规范,以及设备和封装设计的考虑。对于器件制造商、封装设计人员和设备制造商如何共同努力,以促进顺利过渡到40微米以下的线键合,提出了建议。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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