Finite element analysis of hygrothermally induced stresses in plastic IC packages

S. Yi, Jing Sua Goh, Ji Cheng Yang
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引用次数: 2

Abstract

In the present study, the moisture and temperature distributions and residual stresses inside plastic encapsulated IC packages are evaluated in order to asses product reliability. Numerical procedures based on finite element analyses are presented to calculate the hygro-thermally induced deformations and stresses in plastic IC packages during the surface mounting process preceded by the moisture soaking test. For example residual stresses in thin LOC (Lead-On-Chip) TSOP packages during the reflow soldering process preceded by the 168 hours 85/spl deg/C/85% RH moisture soaking test have been studied. Numerical results show that when TSOP packages undergo the reflow soldering process substantially high tensile /spl sigma//sub 2/ stresses arose in the silicon chip while high compressive stresses were in the encapsulant below the chip. Such high compressive and tensile stress development in the silicon chip and encapsulant below the chip is responsible for the delamination and popcorn crack. The results also show that the magnitudes of residual stresses in IC packages may depend not only on the magnitude of loading but also on the loading history due to the hygro-thermo-viscoelastic behavior of plastic mold compound materials.
塑料IC封装湿热应力的有限元分析
在本研究中,评估了塑料封装IC封装内部的水分和温度分布以及残余应力,以评估产品的可靠性。提出了一种基于有限元分析的数值计算方法,用于计算浸湿试验前塑料IC封装表面贴装过程中的湿热变形和应力。例如,在168小时85/spl度/C/85% RH浸湿试验之前,研究了薄LOC(片上铅)TSOP封装在回流焊接过程中的残余应力。数值结果表明,当TSOP封装进行回流焊过程时,硅芯片中产生了很高的拉伸/spl sigma//sub 2/应力,而芯片下方的封装剂中则产生了很高的压应力。这种高压应力和拉应力在硅片和芯片下面的密封剂中发展是造成分层和爆米花裂纹的原因。结果还表明,由于塑料模具复合材料的湿热粘弹性特性,IC封装中残余应力的大小不仅与加载大小有关,还与加载历史有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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