Microstructure characterization of metal interconnects and barrier layers: status and future

Abstract

Metal interconnect and barrier characterization are challenged by reduced feature sizes, advanced materials, and new technologies. Microstructure characterization of new materials is done for thin films deposited on flat substrates and for on-chip interconnect structures. In this paper, both Al and Cu metallizations and respective barriers are discussed. Analytical requirements and advanced techniques for interconnect and barrier microstructure characterization will be covered. Specific topics will be composition and structure of interconnects and barriers, grain size, texture and stress in interconnect lines.