{"title":"3D Interconnect through Conventional Pad by Via-last-from-top Approach","authors":"H. Li, Ling Xie, S. Chong","doi":"10.1109/EPTC47984.2019.9026632","DOIUrl":null,"url":null,"abstract":"To reduce 3D production time, TSV cavity and TSV on conventional Al pads were successfully designed, developed and demonstrated for 3D connection by via-last-from-top (VLFT) approach. Electrical connection through TSV cavity and TSV of 3D stacking was characterized and reported after assembly.","PeriodicalId":244618,"journal":{"name":"2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC47984.2019.9026632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
To reduce 3D production time, TSV cavity and TSV on conventional Al pads were successfully designed, developed and demonstrated for 3D connection by via-last-from-top (VLFT) approach. Electrical connection through TSV cavity and TSV of 3D stacking was characterized and reported after assembly.