A physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD

Abstract

A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design.