Oscillation Built-In-Self-Test for ADC linearity testing in deep submicron CMOS technology

Koay Soon Chan, Nuzrul Fahmi Nordin, Kim Chon Chan, Terk Zyou Lok, C. W. Yong, A. Osseiran
{"title":"Oscillation Built-In-Self-Test for ADC linearity testing in deep submicron CMOS technology","authors":"Koay Soon Chan, Nuzrul Fahmi Nordin, Kim Chon Chan, Terk Zyou Lok, C. W. Yong, A. Osseiran","doi":"10.1109/ASQED.2013.6643589","DOIUrl":null,"url":null,"abstract":"This paper proposes an Oscillation BIST (OBIST) that is meant to test ADCs fabricated in sub 100nm processes. The design is intended to be capable of testing a 10-bit ADC that was designed in 40nm CMOS. The design scheme presents a simple analog stimulus generator that was designed in 40nm CMOS together with schematic based simulation results. There is also a description of a calibration circuit and a highlevel implementation of a BIST control system to run the BIST and to calculate static parameters such as Differential Non-linearity (DNL) and Integral Non-linearity (INL). Simulation results for the analog stimulus generator suggest that OBIST might still be a viable method to test ADCs despite device scaling to sub 100nm processes.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASQED.2013.6643589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper proposes an Oscillation BIST (OBIST) that is meant to test ADCs fabricated in sub 100nm processes. The design is intended to be capable of testing a 10-bit ADC that was designed in 40nm CMOS. The design scheme presents a simple analog stimulus generator that was designed in 40nm CMOS together with schematic based simulation results. There is also a description of a calibration circuit and a highlevel implementation of a BIST control system to run the BIST and to calculate static parameters such as Differential Non-linearity (DNL) and Integral Non-linearity (INL). Simulation results for the analog stimulus generator suggest that OBIST might still be a viable method to test ADCs despite device scaling to sub 100nm processes.
深亚微米CMOS技术中ADC线性度测试的振荡内置自检
本文提出了一种用于测试亚100nm制程adc的振荡BIST (OBIST)。该设计旨在能够测试在40nm CMOS中设计的10位ADC。提出了一种简单的40nm CMOS模拟刺激发生器设计方案,并给出了基于原理图的仿真结果。还描述了校准电路和BIST控制系统的高级实现,以运行BIST并计算静态参数,如微分非线性(DNL)和积分非线性(INL)。模拟刺激发生器的仿真结果表明,尽管器件缩放到100nm以下工艺,OBIST仍然可能是测试adc的可行方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信