Strain Engineering in AlGaN/GaN HEMTs for Performance Enhancement

Abstract

The heterostructure device designs are extending from Silicon to compound semiconductors e.g. III-V. Unlike use of the strain technology in Si devices, stressing methods have not yet been intentionally used in III-V semiconductor devices. In this work, we examine the potential of using strain engineering technology during device fabrication to alter GaN HEMT performance. We examine the process-induced stress effect on the electrical performance of AlGaN/GaN HEMTs via TCAD simulation.