Fin shape influence on the analog performance of standard and strained MuGFETs

Abstract

From the analog performance perspective, there is a fin cross-section shape influence on electric parameters. At weak inversion levels the gm/ID is shape dependent, while for moderate and strong inversions the strain type is dominant, where the mobility starts to play an important role. The output conductance and the Early voltage show a strong dependence on both fin shape and strain type. For thinner Wmid there is a performance increase of up to 3 dB on intrinsic voltage gain compared to rectangular shape. Strained devices present better AV and fT, both following the gm tendency for each channel length.