An approach of auto-fix post OPC hot spots

Ching-Heng Wang, Qingwei Liu, Liguo Zhang
{"title":"An approach of auto-fix post OPC hot spots","authors":"Ching-Heng Wang, Qingwei Liu, Liguo Zhang","doi":"10.1117/12.740406","DOIUrl":null,"url":null,"abstract":"With the design rule shrinks rapidly, full chip robust Optical Proximity Correction (OPC) will definitely need longer time due to the increasing pattern density. Furthermore, to achieve a perfect OPC control recipe becomes more difficult. For, the critical dimension of the design features is deeply sub exposure wavelength, and there is only limited room for the OPC correction. Usually very complicated fragment commands need to be developed to handle the shrinking designs, which can be infinitely complicated. So when you finished debug a sophisticated fragment scripts, you still cannot promise that the script is universal for all kinds of design. So when you find some hot spot after you apply OPC correction for certain design. The only thing you can do is to modify your fragmentation script and try to re-apply OPC on this design. But considering the increasing time that is needed for applying full chip OPC nowadays, re-apply OPC will definitely prolong the tape-out time. We here demonstrate an approach, through which we can automatically fix some simple hotspots like pinch, bridging. And re-run OPC for the full chip is not necessary now. However, this work is only the early study of the auto-fix of post OPC hot spots. There is still a long way need to go to provide a perfect solution of this issue.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Photomask Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.740406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

With the design rule shrinks rapidly, full chip robust Optical Proximity Correction (OPC) will definitely need longer time due to the increasing pattern density. Furthermore, to achieve a perfect OPC control recipe becomes more difficult. For, the critical dimension of the design features is deeply sub exposure wavelength, and there is only limited room for the OPC correction. Usually very complicated fragment commands need to be developed to handle the shrinking designs, which can be infinitely complicated. So when you finished debug a sophisticated fragment scripts, you still cannot promise that the script is universal for all kinds of design. So when you find some hot spot after you apply OPC correction for certain design. The only thing you can do is to modify your fragmentation script and try to re-apply OPC on this design. But considering the increasing time that is needed for applying full chip OPC nowadays, re-apply OPC will definitely prolong the tape-out time. We here demonstrate an approach, through which we can automatically fix some simple hotspots like pinch, bridging. And re-run OPC for the full chip is not necessary now. However, this work is only the early study of the auto-fix of post OPC hot spots. There is still a long way need to go to provide a perfect solution of this issue.
一种自动修复后OPC热点的方法
随着设计规则的迅速缩小,由于图案密度的增加,全芯片鲁棒光学邻近校正(OPC)必然需要更长的时间。此外,要获得一个完美的OPC控制配方变得更加困难。因为,设计特征的关键维度是深亚曝光波长,OPC校正空间有限。通常需要开发非常复杂的碎片命令来处理收缩设计,这可能是无限复杂的。因此,当您调试完一个复杂的片段脚本时,您仍然不能保证该脚本对所有类型的设计都是通用的。所以当你发现一些热点在你对某些设计应用OPC校正后。您唯一能做的就是修改您的碎片脚本,并尝试在此设计上重新应用OPC。但是考虑到现在应用全芯片OPC所需的时间越来越长,重新应用OPC肯定会延长带出时间。我们在这里演示了一种方法,通过它我们可以自动修复一些简单的热点,如夹紧、桥接。现在没有必要为整个芯片重新运行OPC。然而,这项工作只是OPC后热点自动修复的早期研究。要提供一个完美的解决方案,还有很长的路要走。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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