Electroluminescence analysis of neutron irradiation of JFETs

Abstract

Electroluminescence (EL) measurements are used as a sensitive technique for the study of fast neutron irradiation of silicon n-channel JFET overlaid by a passivation oxide layer. By theoretical simulations, it is demonstrated that neutron irradiation result in two effects: an increase of the refractive index of the passivation oxide and the introduction of deep level traps which reduce the emitted intensities by reduction of the mobility of hot carriers.