Wafer-level electromigration tests on NIST and SWEAT structures

Abstract

Wafer-level electromigration tests are carried out on NIST and SWEAT structures. Four different process splits are tested. For 300/spl deg/C maximum line temperature both structures allow detection of the differences in the process. On the other hand, for high maximum temperature no difference in process is observed by the electromigration tests. On the basis of these results, advantages and drawbacks of SWEAT and NIST structures are discussed.