J. V. Schoot, E. V. Setten, K. Troost, Frank Bornebroek, Rob van Ballegoij, S. Lok, J. Stoeldraijer, J. Finders, Paul Graeupner, J. Zimmermann, Peter Kuerz, Marco Pieters, W. Kaiser
{"title":"High-NA EUV lithography exposure tool progress","authors":"J. V. Schoot, E. V. Setten, K. Troost, Frank Bornebroek, Rob van Ballegoij, S. Lok, J. Stoeldraijer, J. Finders, Paul Graeupner, J. Zimmermann, Peter Kuerz, Marco Pieters, W. Kaiser","doi":"10.1117/12.2515205","DOIUrl":null,"url":null,"abstract":"While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. \nThe purpose of this high-NA scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade. \nA novel lens design, capable of providing the required Numerical Aperture, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes. \nIn this paper an update will be given on the status of the developments at ZEISS and ASML. Next to this, we will address several topics inherent in the new design and smaller target resolution: M3D effects, polarization, focus control and stitching.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"94 18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extreme Ultraviolet (EUV) Lithography X","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2515205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55.
The purpose of this high-NA scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade.
A novel lens design, capable of providing the required Numerical Aperture, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes.
In this paper an update will be given on the status of the developments at ZEISS and ASML. Next to this, we will address several topics inherent in the new design and smaller target resolution: M3D effects, polarization, focus control and stitching.
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