TCAD simulation in development and fabrication of deep-sub-/spl mu/m devices

Abstract

In this paper experiences in use and application of TCAD in fabrication environment of deep sub-/spl mu/m semiconductor devices is given. Thereby we do not limit ourselves to standard process and device simulation but we discuss also the extension to parameter extraction, ESD and SER simulations. The main goal is to show how one can get a benefit from TCAD and what should be the expectation regarding accuracy and capability to predict. The limits of TCAD and the current status of 3D process and device simulation are discussed at the end of the paper.