SEU Testing of SiGe Bipolar and BiCMOS Circuits

Abstract

Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.