An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs

Abstract

Ultrathin gate dielectrics are important to realize high performance and low-voltage operation CMOS devices. An advanced ultrathin gate dielectric formation process, that is, direct nitridation of silicon and sequential oxidation, is proposed and evaluated to suppress boron penetration and to improve hot-carrier reliability. No boron penetration, longer hot-carrier lifetime and high drain current are achieved in MOSFETs with 2.5nm oxidized nitride gate dielectric.