4500 V trench IEGTs having superior turn-on switching characteristics

Abstract

Turn-on characteristics of 4500 V trench IEGTs are discussed. First, turn-on switching power loss was measured using an inductive load circuit. As a result, the turn-on switching power loss of trench IEGTs was smaller than that of planer IEGTs because of high density of MOS-channels. Then di/dt ruggedness of trench IEGTs was measured using a LC resonance circuit. It is concluded that trench IEGTs have a sufficiently di/dt ruggedness.