The analysis of silicon bipolar transistor scaling-down scheme for low noise and low power analog application

N. Itoh, Y. Yoshida, S. Watanabe, Y. Katsumata, H. Iwai
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引用次数: 1

Abstract

A scheme for scaling-down of the silicon analog bipolar transistors has been investigated in detail in terms of power consumption, noise figure and associated power gain. There is an appropriate scaling approach for the analog bipolars.
低噪声低功耗模拟应用中硅双极晶体管缩小方案的分析
从功耗、噪声系数和相关功率增益等方面详细研究了硅模拟双极晶体管的缩小方案。对于模拟双极,有一种合适的标度方法。
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