High performance submicron SOI/CMOS with an elevated source/drain structure

Abstract

To overcome the source/drain resistance problem associated with complete silicidation of thin SOI films, we used an elevated source/drain structure in which the channel region was thinned by local oxidation and wet etch while the source/drain region remained thick. This structure achieved source/drain resistances as small as 300 ohm-/spl mu/m for NMOS, which made possible high drive currents in deep submicron thin-film SOI/MOSFETs.<>