A Study of the Growth Rate of Cu-Sn Intermetallic Compounds for Transient Liquid Phase Bonding during Isothermal Aging

S. Jeong, Seung-Boo Jung, Jeong-Won Yoon
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引用次数: 2

Abstract

Recently, research and development of power electronics, such as inverter systems and power modules, in electric vehicles (EV) and hybrid electric vehicles (HEV) are increasing. In the power electronic systems, the chip junction temperature is extremely high during operation. Therefore, the new bonding materials and methods are needed for operation at high temperatures for power electronic packaging. Some good candidates for high temperature die-attach applications include high-temperature solders such as Au-Sn, Ag sinter pastes, and transient liquid phase (TLP) bonding materials. Among them, a TLP bonding technology utilizes cheap metals such as Cu, Ni, and Sn. This process is also similar to the conventional soldering process and is reliable when subjected to high temperatures over long durations. TLP bonding is a die-attach technology wherein an intermetallic compound (IMC) is formed via a diffusion reaction by incorporating a low melting point metal between metals with high melting points. This paper presents the growth rate of forming Cu-Sn IMCs in the composite preform that is used as a die-attach material for a TLP bonding. To overcome the drawbacks of the TLP bonding such as a long bonding time, the composite preform was fabricated, and the feasibility for high-temperature power electronics applications was evaluated in this study. The composite preform is composed of a Cu core layer with a high-melting temperature and a low-melting temperature Sn coating at both sides of the Cu core layer. During aging treatment, the Cu-Sn IMC layer was rapidly formed by consuming the both low-melting point Sn layers. The IMC formation by the reaction between Cu and Sn is very important because it affects the thermal, electrical and mechanical reliability for electronic packaging technologies. After isothermal aging treatments at $150^{\circ}\mathrm{C}$ for various times, the thicknesses of Sn, Cu, and Cu-Sn IMC layers in the composite preform were investigated using field-emission scanning electron microscope (FE-SEM, INSPECT F, FEI, USA) equipped with an energy dispersive X-ray spectroscope (EDX) and focused ion beam (FIB, NOVA-600, FEI, USA).
等温时效过程中Cu-Sn金属间化合物生长速率的研究
近年来,在电动汽车(EV)和混合动力汽车(HEV)中,逆变系统和电源模块等电力电子技术的研究和开发越来越多。在电力电子系统中,芯片结温在运行过程中是非常高的。因此,电力电子封装在高温下工作,需要新的粘接材料和方法。高温模贴应用的一些良好候选者包括高温焊料,如Au-Sn, Ag烧结糊和瞬态液相(TLP)粘合材料。其中,TLP键合技术利用了Cu、Ni、Sn等廉价金属。该工艺也类似于传统的焊接工艺,并且在长时间高温下是可靠的。TLP键合是一种模接技术,其中通过在高熔点金属之间结合低熔点金属的扩散反应形成金属间化合物(IMC)。本文介绍了在作为TLP键合模附材料的复合预制体中形成Cu-Sn IMCs的生长速度。为克服TLP粘接时间长等缺点,制备了复合预制体,并对其在高温电力电子领域应用的可行性进行了评估。复合预制件由高熔点的Cu核心层和低熔点的Cu核心层两侧的Sn涂层组成。时效处理过程中,Cu-Sn IMC层通过消耗低熔点Sn层快速形成。铜和锡之间的反应形成的IMC是非常重要的,因为它影响到电子封装技术的热、电和机械可靠性。采用场发射扫描电镜(FE-SEM, INSPECT F, FEI,美国)、能量色散x射线光谱仪(EDX)和聚焦离子束(FIB, NOVA-600, FEI,美国)对复合预制体中Sn、Cu和Cu-Sn IMC层的厚度进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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