Thin-body FinFET as scalable low voltage transistor

C. Hu
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引用次数: 24

Abstract

FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.
作为可伸缩低压晶体管的薄体FinFET
FinFET为ic从性能、功率和器件变化的困境中提供了必要的缓解。它还提供了更高的载流子迁移率,特别是在接近阈值电压的低电压下,为实用的近阈值电路提供了希望。与FinFET同时构思的另一种新型晶体管UTB-SOI FET也正在投入生产。他们共同展示了一种新的缩放路径:将体厚与栅极长度成比例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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