Recess channel structure for reducing source/drain series resistance in ultra-thin SOI MOSFETs

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344549

M. Chan, F. Assaderaghi, S. A. Parke, S. S. Yuen, C. Hu, P. Ko

引用次数: 16

Abstract

A new Recess-Channel technology has been developed which significantly reduces the source/drain series resistance. This technology is potentially very useful for ultra-thin-film fully depleted SOI MOSFET fabrication with arbitrary silicon film thickness. Silicide technology may also be used in conjunction with the Recess-Channel technique to further reduce the source/drain series resistance and increase the current drive.<>

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用于降低超薄SOI mosfet源漏串联电阻的凹槽沟道结构

一种新的凹槽通道技术已经开发出来，可以显著降低源/漏系列电阻。该技术在任意硅膜厚度的超薄膜全耗尽SOI MOSFET制造中具有潜在的应用价值。硅化技术也可以与凹槽通道技术结合使用，进一步降低源极/漏极串联电阻，增加电流驱动

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1993 IEEE International SOI Conference

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