AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process

Abstract

AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. R_on of 3 mΩ.cm² was obtained. Breakdown voltage V_BR of 800 V was achieved, the highest for L_GD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts.