Large signal characterization of GaN HEMT transistor by multi-harmonic source & load pull tuner system

Abstract

In this paper, a GaN HEMT transistor is characterized at 3.5 GHz by passive multi-harmonic source & load pull tuner system in large signal. In order to analyze the effect on PAE and output power from the source and load impedance at fundamental, 2nd and 3rd harmonic frequencies, multi-harmonic source and load pull tuner are used. By using this source & load pull tuner system, Cree's GaN HEMT CGH40010 transistor is characterized at 3.5 GHz with considering the source and load impedances at 2nd and 3rd harmonic frequencies. The characterization result shows that maximum PAE could reach 74.21% with 39.92 dBm output power.