Three-port RF characterization of foundry dual-gate FETs using two-port test structures with on-chip loading resistors

Abstract

Special test structures for the three-port linear RF characterization of dual-gate FETs using on-chip integrated 50 ohm load resistors for the third port are described. These test structures allow us to characterize dual-gate FETs with a standard two-port network analyzer and only two wafer probes. Measurement results of test FETs realized on a commercial GaAs foundry MESFET process show that good accuracy of the three-port S-parameters is achieved.