New on-Chip DFT and ATE Features for Efficient Embedded Memory Test

P. Muhmenthaler
{"title":"New on-Chip DFT and ATE Features for Efficient Embedded Memory Test","authors":"P. Muhmenthaler","doi":"10.1109/MTDT.2006.20","DOIUrl":null,"url":null,"abstract":"Testing of embedded memories, independent whether it is of volatile or non-volatile type, is based on various kinds of built-in self-test. This test solution is often driven by the fact that the system application does not provide an atspeed signal interface at the product pins. In complex SoC designs it is furthermore mandatory to do BIST as there are multiple memories of various size and organization integrated onto one chip. Given the fact that multi-site testing is state of the art even for highly complex SoCs the requirements onto the available test equipment (ATE) depend on the selection whether the product is dominated by memory or by logic/mixed signal or RF functions. This often leads to less efficient test solutions and requires multi insertion test flows in production. Here a new approach will be presented to bridge this challenging scenario. It contains a new type of signal and information handling interface between the device under test and the tester. The revolutionary change is that the ATE will act in a slave mode during a significant fraction of the manufacturing test while the DUT controls timing as well as data flow. Such new interface can serve the needs for data collection with focus on diagnosis (scan test diagnosis) at volume manufacturing as well as the complex handling of fail bit data at zero test time overhead. The basic building blocks either on-chip or in the ATE instrumentation will be explained. Especially in testing multiple embedded memories on multiple chips at the same time the throughput increase will be extraordinary.","PeriodicalId":320365,"journal":{"name":"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2006.20","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Testing of embedded memories, independent whether it is of volatile or non-volatile type, is based on various kinds of built-in self-test. This test solution is often driven by the fact that the system application does not provide an atspeed signal interface at the product pins. In complex SoC designs it is furthermore mandatory to do BIST as there are multiple memories of various size and organization integrated onto one chip. Given the fact that multi-site testing is state of the art even for highly complex SoCs the requirements onto the available test equipment (ATE) depend on the selection whether the product is dominated by memory or by logic/mixed signal or RF functions. This often leads to less efficient test solutions and requires multi insertion test flows in production. Here a new approach will be presented to bridge this challenging scenario. It contains a new type of signal and information handling interface between the device under test and the tester. The revolutionary change is that the ATE will act in a slave mode during a significant fraction of the manufacturing test while the DUT controls timing as well as data flow. Such new interface can serve the needs for data collection with focus on diagnosis (scan test diagnosis) at volume manufacturing as well as the complex handling of fail bit data at zero test time overhead. The basic building blocks either on-chip or in the ATE instrumentation will be explained. Especially in testing multiple embedded memories on multiple chips at the same time the throughput increase will be extraordinary.
新的片上DFT和ATE功能用于高效嵌入式存储器测试
嵌入式存储器的测试,无论它是易失性的还是非易失性的,都是基于各种内置自检。该测试解决方案通常是由系统应用程序在产品引脚处不提供高速信号接口这一事实驱动的。在复杂的SoC设计中,由于在一个芯片上集成了各种尺寸和组织的多个存储器,因此必须执行BIST。考虑到即使对于高度复杂的soc,多站点测试也是最先进的,对可用测试设备(ATE)的要求取决于产品是由存储器还是逻辑/混合信号或RF功能主导的选择。这通常会导致效率较低的测试解决方案,并且在生产中需要多个插入测试流。这里将提出一种新的方法来解决这一具有挑战性的情况。它包含了一种新型的被测设备与测试仪之间的信号和信息处理接口。革命性的变化是,在制造测试的大部分时间里,ATE将以从属模式工作,而DUT则控制时间和数据流。这种新接口可以满足批量生产中数据收集的需求,重点是诊断(扫描测试诊断),以及零测试时间开销下故障位数据的复杂处理。将解释片上或ATE仪器中的基本构建块。特别是在多个芯片上同时测试多个嵌入式存储器时,吞吐量的提高将是惊人的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信