{"title":"Low capacitance approaches for 22nm generation Cu interconnect","authors":"T. Bao, H. Chen, C.J. Lee, H. Lu, S. Shue, C. Yu","doi":"10.1109/VTSA.2009.5159288","DOIUrl":null,"url":null,"abstract":"Various integration approaches, including homogeneous porous Low-k and air gaps, for low-capacitance solution were investigated for 22nm Cu interconnect technology and beyond. For homogeneous Low-k approach, K=2.0 Low-k material is successfully integrated with Cu. Up to 15% line to line capacitance reduction compared with LK-1 (K= 2.5) was demonstrated by a damage-less etching and CMP process. For air gap approach, a cost-effective and Selective air gaps formation process was developed. Air gaps are selectively formed only at narrow spacing between conduction lines without additional processes.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Various integration approaches, including homogeneous porous Low-k and air gaps, for low-capacitance solution were investigated for 22nm Cu interconnect technology and beyond. For homogeneous Low-k approach, K=2.0 Low-k material is successfully integrated with Cu. Up to 15% line to line capacitance reduction compared with LK-1 (K= 2.5) was demonstrated by a damage-less etching and CMP process. For air gap approach, a cost-effective and Selective air gaps formation process was developed. Air gaps are selectively formed only at narrow spacing between conduction lines without additional processes.