VLSI device parameters extraction for radiation hardness modeling with SPICE

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292901

K. O. Petrosjanc, I. Kharitonov

引用次数: 15

Abstract

For purposes of radiation hardness modeling with SPICE (simulation program with IC emphasis), the procedures for bipolar and MOS transistor model parameter definition are described. The procedures are derived for standard and modified SPICE models. Examples of parameter extraction for irradiated devices are given.<>

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基于SPICE的超大规模集成电路器件辐射硬度建模参数提取

为了利用SPICE(集成电路重点仿真程序)进行辐射硬度建模，描述了双极晶体管和MOS晶体管模型参数定义的过程。推导了标准和改进的SPICE模型的程序。给出了辐照器件参数提取的实例。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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