Statistical modeling tools, methods and applications for integrated circuit manufacturability

F. Iravani, M. Habu, E. Khalily
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引用次数: 11

Abstract

A description of various statistical modeling methods is provided. The analysis methods are discussed to remove the confusion in the existing literature. Statistical models are generated using factor analytic technique for SPICE level 3 on a 0.8 micron LDD CMOS. It is shown that our measurement based approach accurately predicts the device performance. We show that the existence of a "physical MOS model" is not a necessary pre-requisite to perform statistical modeling. Our approach provides models that are suitable for both analog and digital designs and promises to make statistical modeling feasible for general use.
集成电路可制造性的统计建模工具、方法和应用
对各种统计建模方法进行了描述。讨论了分析方法,以消除现有文献中的混淆。利用因子分析技术对0.8微米LDD CMOS上的SPICE 3级生成统计模型。结果表明,基于测量的方法可以准确地预测器件的性能。我们证明了“物理MOS模型”的存在并不是进行统计建模的必要先决条件。我们的方法提供了适合模拟和数字设计的模型,并承诺使统计建模在一般情况下可行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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