Analysis of thermal evolution in power semiconductor modules as lifetime and reliability tool

M. Pieschel, Y. Gerstenmaier, G. Mitic, M. Neumeister, J. Seidel
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引用次数: 3

Abstract

A method is presented for temperature calculations in systems with irregular rapidly varying chip-powers by solution of implicit integral equations, where the dissipated power may depend on chip-temperature itself. For discontinuous power evolution differential equation solvers pose problems in treating thermal equivalent circuits. When no thermal model exists, the method can start directly from measured cool down curves. For user specified mission profiles over long duration, semiconductor module lifetimes are estimated by thermal cycle counting and application of the Palmgren-Miner-rule. For simplified models of chip power dissipation thermal runaway can be observed in case of unfortunate system parameters. A general criterion is inferred for the thermal stability of the system with the help of a quasi steady-state model for the system's cooling power described by a single thermal resistor.
作为寿命和可靠性工具的功率半导体模块热演化分析
本文提出了一种求解隐式积分方程的方法来计算具有不规则快速变化芯片功率的系统的温度,其中耗散功率可能与芯片温度本身有关。对于不连续功率演化,微分方程求解在处理热等效电路时存在问题。当不存在热模型时,该方法可以直接从测量的冷却曲线开始。对于用户指定的长时间任务剖面,通过热循环计数和palmgren - miner规则的应用来估计半导体模块的寿命。对于简化的芯片功耗模型,在系统参数不合理的情况下可以观察到热失控现象。借助单个热电阻描述的系统冷却功率的准稳态模型,推导出系统热稳定性的一般判据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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