Study on the Method to Analyze the Electrical Contact Resistances of Press-Pack IGBT devices

Xiao Wang, Hui Li, Ran Yao, Haiyang Long, Yi Zhong, Renze Yu, Jinyuan Li
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引用次数: 2

Abstract

Electrical contact resistances are the link between the mechanical model and the electrical model, which should be accurately determined to analyze the electro-thermal distribution of the press-pack IGBT devices. However, determining the electrical contact resistances is very difficult because they are affected by pressure and material properties and cannot be measured directly. In this paper, a method to identify electrical contact resistances is proposed based the electrical contact theory for press-pack IGBT devices. Firstly, the mathematical model of electrical contact resistance is derived by considering contact pressure, surface roughness, surface micro-hardness and material resistivity. Then, a circuit model of single-chip press-pack IGBT device is established by using the presented electrical contact resistances. Furthermore, the surface characteristics of the materials are analyzed to determine the parameters of electrical contact resistances, especially the effects of the chip surface metal coating. Finally, the influence of pressure on the electrical contact resistance of each contact surface of the device is also analyzed. The relationship of the on-resistance of the sing-chip press-pack IGBT device with pressure is obtained by using four-point probing approach. The validity of the proposed model is demonstrated.
压包式IGBT器件接触电阻分析方法研究
接触电阻是连接机械模型和电学模型的纽带,分析压包式IGBT器件的电热分布需要准确确定接触电阻。然而,确定电接触电阻是非常困难的,因为它们受压力和材料特性的影响,不能直接测量。本文提出了一种基于电接触理论的压装式IGBT器件接触电阻辨识方法。首先,考虑接触压力、表面粗糙度、表面显微硬度和材料电阻率,建立了接触电阻的数学模型;然后,利用给出的接触电阻建立了单片压封装IGBT器件的电路模型。此外,分析了材料的表面特性,确定了接触电阻的参数,特别是芯片表面金属涂层的影响。最后,分析了压力对器件各接触面电接触电阻的影响。采用四点探针法,得到了单片压封装IGBT器件导通电阻与压力的关系。验证了该模型的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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