3D integrable nanowire FET sensor with intrinsic sensitivity boost

Abstract

In this paper, we review a recently developed transformative nanowire FET sensor concept and 3D-compatible fabrication technology. Compared to the generic nanowire FET sensors, an intrinsic boost in detection sensitivity is accomplished through the seamless integration of a sensing nanowire with an amplifying nanowire FET. Exclusively enabled by top-down nanofabrication technology, the back-end-of-line compatible sub-450 °C manufacturing processes have been developed. Sensing experimental data have also revealed around 1 order of magnitude sensitivity improvement in solution pH detection. Finally, an ultra-low thermal budget nanowire formation technology has been preliminarily developed for future 3D integration with CMOS.